DMHC3025LSDQ-13
DMHC3025LSDQ-13
Modèle de produit:
DMHC3025LSDQ-13
Fabricant:
Diodes Incorporated
La description:
MOSFET 2N/2P-CH 30V 8SOIC
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
7075 Pieces
Heure de livraison:
1-2 days
Fiche technique:
DMHC3025LSDQ-13.pdf

introduction

We can supply DMHC3025LSDQ-13, use the request quote form to request DMHC3025LSDQ-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMHC3025LSDQ-13.The price and lead time for DMHC3025LSDQ-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMHC3025LSDQ-13.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Package composant fournisseur:8-SO
Séries:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 5A, 10V
Puissance - Max:1.5W
Emballage:Tape & Reel (TR)
Package / Boîte:8-SOIC (0.154", 3.90mm Width)
Autres noms:DMHC3025LSDQ-13DITR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:590pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:11.7nC @ 10V
type de FET:2 N and 2 P-Channel (H-Bridge)
Fonction FET:Standard
Tension drain-source (Vdss):30V
Description détaillée:Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 6A, 4.2A 1.5W Surface Mount 8-SO
Courant - Drainage continu (Id) à 25 ° C:6A, 4.2A
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes