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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > DMG8N65SCT
DMG8N65SCT
Modèle de produit:
DMG8N65SCT
Fabricant:
Diodes Incorporated
La description:
MOSFET N-CH 650V 8A TO220AB
État sans plomb / État RoHS:
Contient du plomb / conforme à la directive RoHS
quantité disponible:
77839 Pieces
Heure de livraison:
1-2 days
Fiche technique:
DMG8N65SCT.pdf
Enquête

introduction

We can supply DMG8N65SCT, use the request quote form to request DMG8N65SCT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG8N65SCT.The price and lead time for DMG8N65SCT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG8N65SCT.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220AB
Séries:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:1.3 Ohm @ 4A, 10V
Dissipation de puissance (max):125W (Tc)
Emballage:Cut Tape (CT)
Package / Boîte:TO-220-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Délai de livraison standard du fabricant:22 Weeks
Statut sans plomb / Statut RoHS:Contains lead / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1217pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:30nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):650V
Description détaillée:N-Channel 650V 8A (Tc) 125W (Tc) Through Hole TO-220AB
Courant - Drainage continu (Id) à 25 ° C:8A (Tc)
Email:[email protected]

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