BSG0813NDIATMA1
BSG0813NDIATMA1
Modèle de produit:
BSG0813NDIATMA1
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET 2N-CH 25V 19A/33A 8TISON
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
48160 Pieces
Heure de livraison:
1-2 days
Fiche technique:
BSG0813NDIATMA1.pdf

introduction

We can supply BSG0813NDIATMA1, use the request quote form to request BSG0813NDIATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSG0813NDIATMA1.The price and lead time for BSG0813NDIATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSG0813NDIATMA1.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Package composant fournisseur:PG-TISON-8
Séries:-
Rds On (Max) @ Id, Vgs:3 mOhm @ 20A, 10V
Puissance - Max:2.5W
Emballage:Tape & Reel (TR)
Package / Boîte:8-PowerTDFN
Autres noms:SP001241676
Température de fonctionnement:-55°C ~ 155°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1100pF @ 12V
Charge de la porte (Qg) (Max) @ Vgs:8.4nC @ 4.5V
type de FET:2 N-Channel (Dual) Asymmetrical
Fonction FET:Logic Level Gate, 4.5V Drive
Tension drain-source (Vdss):25V
Description détaillée:Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 33A 2.5W Surface Mount PG-TISON-8
Courant - Drainage continu (Id) à 25 ° C:19A, 33A
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes