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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - tableaux > APTM120A65FT1G
APTM120A65FT1G
Modèle de produit:
APTM120A65FT1G
Fabricant:
Microsemi
La description:
MOSFET 2N-CH 1200V 16A SP1
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
19356 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.APTM120A65FT1G.pdf2.APTM120A65FT1G.pdf
Enquête

introduction

We can supply APTM120A65FT1G, use the request quote form to request APTM120A65FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM120A65FT1G.The price and lead time for APTM120A65FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM120A65FT1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 2.5mA
Package composant fournisseur:SP1
Séries:-
Rds On (Max) @ Id, Vgs:780 mOhm @ 14A, 10V
Puissance - Max:390W
Emballage:Bulk
Package / Boîte:SP1
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:7736pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:300nC @ 10V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Standard
Tension drain-source (Vdss):1200V (1.2kV)
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 16A 390W Chassis Mount SP1
Courant - Drainage continu (Id) à 25 ° C:16A
Email:[email protected]

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