AOWF11S60
AOWF11S60
Modèle de produit:
AOWF11S60
Fabricant:
Alpha and Omega Semiconductor, Inc.
La description:
MOSFET N-CH 600V 11A TO262F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
71375 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.AOWF11S60.pdf2.AOWF11S60.pdf

introduction

We can supply AOWF11S60, use the request quote form to request AOWF11S60 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AOWF11S60.The price and lead time for AOWF11S60 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AOWF11S60.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.1V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Séries:aMOS™
Rds On (Max) @ Id, Vgs:399 mOhm @ 3.8A, 10V
Dissipation de puissance (max):28W (Tc)
Emballage:Tube
Package / Boîte:TO-262-3 Full Pack, I²Pak
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:545pF @ 100V
Charge de la porte (Qg) (Max) @ Vgs:11nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 11A (Tc) 28W (Tc) Through Hole
Courant - Drainage continu (Id) à 25 ° C:11A (Tc)
Email:[email protected]

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