AOTF7N60
AOTF7N60
Modèle de produit:
AOTF7N60
Fabricant:
Alpha and Omega Semiconductor, Inc.
La description:
MOSFET N-CH 600V 7A TO220F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
24632 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.AOTF7N60.pdf2.AOTF7N60.pdf

introduction

We can supply AOTF7N60, use the request quote form to request AOTF7N60 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AOTF7N60.The price and lead time for AOTF7N60 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AOTF7N60.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-220-3F
Séries:-
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 3.5A, 10V
Dissipation de puissance (max):38.5W (Tc)
Emballage:Tube
Package / Boîte:TO-220-3 Full Pack
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:26 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:1035pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:28nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):600V
Description détaillée:N-Channel 600V 7A (Tc) 38.5W (Tc) Through Hole TO-220-3F
Courant - Drainage continu (Id) à 25 ° C:7A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes