AFT21H350W04GSR6
Modèle de produit:
AFT21H350W04GSR6
Fabricant:
NXP Semiconductors / Freescale
La description:
FET RF 2CH 65V 2.11GHZ
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
17246 Pieces
Heure de livraison:
1-2 days
Fiche technique:
AFT21H350W04GSR6.pdf

introduction

We can supply AFT21H350W04GSR6, use the request quote form to request AFT21H350W04GSR6 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number AFT21H350W04GSR6.The price and lead time for AFT21H350W04GSR6 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# AFT21H350W04GSR6.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Test:28V
Tension - Nominale:65V
Transistor Type:LDMOS
Package composant fournisseur:NI-1230S-4 GULL
Séries:-
Alimentation - sortie:63W
Emballage:Tape & Reel (TR)
Package / Boîte:NI-1230S-4 GW
Autres noms:935320228128
Noise Figure:-
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Gain:16.4dB
La fréquence:2.11GHz
Description détaillée:RF Mosfet LDMOS 28V 750mA 2.11GHz 16.4dB 63W NI-1230S-4 GULL
Note actuelle:-
Courant - Test:750mA
Email:[email protected]

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