8EWS12STRL
8EWS12STRL
Modèle de produit:
8EWS12STRL
Fabricant:
La description:
DIODE GEN PURP 1.2KV 8A DPAK
État sans plomb / État RoHS:
Contient du plomb / Non conforme à RoHS
quantité disponible:
28959 Pieces
Heure de livraison:
1-2 days
Fiche technique:
8EWS12STRL.pdf

introduction

We can supply 8EWS12STRL, use the request quote form to request 8EWS12STRL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 8EWS12STRL.The price and lead time for 8EWS12STRL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 8EWS12STRL.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:8A
Tension - Ventilation:D-PAK (TO-252AA)
Séries:-
État RoHS:Tape & Reel (TR)
Temps de recouvrement inverse (trr):Standard Recovery >500ns, > 200mA (Io)
Résistance @ Si, F:-
Polarisation:TO-252-3, DPak (2 Leads + Tab), SC-63
Autres noms:VS-8EWS12STRL
VS-8EWS12STRL-ND
VS8EWS12STRL
VS8EWS12STRL-ND
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:8EWS12STRL
Description élargie:Diode Standard 1200V (1.2kV) 8A Surface Mount D-PAK (TO-252AA)
Configuration diode:50µA @ 1200V
La description:DIODE GEN PURP 1.2KV 8A DPAK
Courant - fuite, inverse à Vr:1.1V @ 8A
Courant - Moyen redressé (Io) (par diode):1200V (1.2kV)
Capacité à Vr, F:-55°C ~ 150°C
Email:[email protected]

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