2SK879-GR(TE85L,F)
2SK879-GR(TE85L,F)
Modèle de produit:
2SK879-GR(TE85L,F)
Fabricant:
Toshiba Semiconductor and Storage
La description:
JFET N-CH 0.1W USM
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
30034 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2SK879-GR(TE85L,F).pdf

introduction

We can supply 2SK879-GR(TE85L,F), use the request quote form to request 2SK879-GR(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SK879-GR(TE85L,F).The price and lead time for 2SK879-GR(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SK879-GR(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Cutoff (VGS off) @ Id:400mV @ 100nA
Package composant fournisseur:USM
Séries:-
Puissance - Max:100mW
Emballage:Cut Tape (CT)
Package / Boîte:SC-70, SOT-323
Autres noms:2SK879-GR(TE85LF)CT
Température de fonctionnement:125°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:8.2pF @ 10V
type de FET:N-Channel
Description détaillée:JFET N-Channel 100mW Surface Mount USM
Courant - Drain (Idss) @ Vds (VGS = 0):2.6mA @ 10V
Email:[email protected]

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