2SK4151TZ-E
2SK4151TZ-E
Modèle de produit:
2SK4151TZ-E
Fabricant:
Renesas Electronics America
La description:
MOSFET N-CH 150V 1A TO-92
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
77786 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2SK4151TZ-E.pdf

introduction

We can supply 2SK4151TZ-E, use the request quote form to request 2SK4151TZ-E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SK4151TZ-E.The price and lead time for 2SK4151TZ-E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SK4151TZ-E.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:-
Vgs (Max):±10V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-92
Séries:-
Rds On (Max) @ Id, Vgs:1.95 Ohm @ 500mA, 4V
Dissipation de puissance (max):750mW (Ta)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-226-3, TO-92-3 (TO-226AA)
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:98pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:3.5nC @ 4V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):2.5V, 4V
Tension drain-source (Vdss):150V
Description détaillée:N-Channel 150V 1A (Ta) 750mW (Ta) Through Hole TO-92
Courant - Drainage continu (Id) à 25 ° C:1A (Ta)
Email:[email protected]

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