2SC5201(T6MURATAFM
Modèle de produit:
2SC5201(T6MURATAFM
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS NPN 50MA 600V TO226-3
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
32008 Pieces
Heure de livraison:
1-2 days
Fiche technique:
2SC5201(T6MURATAFM.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):600V
Vce Saturation (Max) @ Ib, Ic:1V @ 500mA, 20mA
Transistor Type:NPN
Package composant fournisseur:TO-92MOD
Séries:-
Puissance - Max:900mW
Emballage:Bulk
Package / Boîte:TO-226-3, TO-92-3 Long Body
Autres noms:2SC5201T6MURATAFM
Température de fonctionnement:150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:-
Description détaillée:Bipolar (BJT) Transistor NPN 600V 50mA 900mW Through Hole TO-92MOD
Gain en courant DC (hFE) (Min) @ Ic, Vce:100 @ 20mA, 5V
Courant - Collecteur Cutoff (Max):1µA (ICBO)
Courant - Collecteur (Ic) (max):50mA
Email:[email protected]

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