1SS307E,L3F
1SS307E,L3F
Modèle de produit:
1SS307E,L3F
Fabricant:
Toshiba Semiconductor and Storage
La description:
DIODE GEN PURP 80V 100MA SC79
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
75516 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1SS307E,L3F.pdf

introduction

We can supply 1SS307E,L3F, use the request quote form to request 1SS307E,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 1SS307E,L3F.The price and lead time for 1SS307E,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 1SS307E,L3F.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - directe (Vf) (max) @ Si:1.3V @ 100mA
Tension - inverse (Vr) (max):80V
Package composant fournisseur:SC-79
La vitesse:Small Signal =< 200mA (Io), Any Speed
Séries:-
Emballage:Tape & Reel (TR)
Package / Boîte:SC-79, SOD-523
Autres noms:1SS307E,L3F(B
1SS307E,L3F(T
1SS307EL3FTR
Température d'utilisation - Jonction:150°C (Max)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:16 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 80V 100mA Surface Mount SC-79
Courant - fuite, inverse à Vr:10nA @ 80V
Courant - Rectifié moyenne (Io):100mA
Capacité à Vr, F:6pF @ 0V, 1MHz
Email:[email protected]

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