SQ3985EV-T1_GE3
SQ3985EV-T1_GE3
Número de pieza:
SQ3985EV-T1_GE3
Fabricante:
Electro-Films (EFI) / Vishay
Descripción:
MOSFET 2 P-CH 20V 3.9A 6TSOP
Cantidad disponible:
44977 Pieces
El tiempo de entrega:
1-2 days
Ficha de datos:
SQ3985EV-T1_GE3.pdf

Introducción

We can supply SQ3985EV-T1_GE3, use the request quote form to request SQ3985EV-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQ3985EV-T1_GE3.The price and lead time for SQ3985EV-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQ3985EV-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Especificaciones

Condición New & Unused, Original Packing
Origen Contact us
VGS (th) (Max) @Id:1.5V @ 250µA
Paquete del dispositivo:6-TSOP
Serie:Automotive, AEC-Q101, TrenchFET®
RDS (Max) @Id, Vgs:145 mOhm @ 2.8A, 4.5V
Potencia - Max:3W
embalaje:Tape & Reel (TR)
Paquete / Cubierta:SOT-23-6 Thin, TSOT-23-6
Temperatura de funcionamiento:-55°C ~ 175°C (TJ)
Tipo de montaje:Surface Mount
Capacitancia de Entrada (Ciss) (Max) @ Vds:350pF @ 10V
Carga de puerta (Qg) (máx.) @ Vgs:4.6nC @ 4.5V
Tipo FET:2 P-Channel (Dual)
Característica de FET:Standard
Voltaje drenaje-fuente (VDS) Las:20V
Descripción detallada:Mosfet Array 2 P-Channel (Dual) 20V 3.9A (Tc) 3W Surface Mount 6-TSOP
Corriente - Drenaje Continuo (Id) @ 25 ° C:3.9A (Tc)
Email:[email protected]

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