TPN2R805PL,L1Q
Varenummer:
TPN2R805PL,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
X35 PB-F POWER MOSFET TRANSISTOR
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
26681 Pieces
Leveringstid:
1-2 days
Datablad:
TPN2R805PL,L1Q.pdf

Introduktion

We can supply TPN2R805PL,L1Q, use the request quote form to request TPN2R805PL,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPN2R805PL,L1Q.The price and lead time for TPN2R805PL,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPN2R805PL,L1Q.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.4V @ 300µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:8-TSON Advance (3.3x3.3)
Serie:U-MOSIX-H
Rds On (Max) @ Id, Vgs:2.8 mOhm @ 40A, 10V
Power Dissipation (Max):2.67W (Ta), 104W (Tc)
Pakke / tilfælde:8-PowerVDFN
Andre navne:TPN2R805PLL1Q
Driftstemperatur:175°C
Monteringstype:Surface Mount
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:3.2nF @ 22.5V
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V, 10V
Afløb til Source Voltage (VDSS):45V
Detaljeret beskrivelse:N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:139A (Ta), 80A (Tc)
Email:[email protected]

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