STH315N10F7-2
STH315N10F7-2
Varenummer:
STH315N10F7-2
Fabrikant:
STMicroelectronics
Beskrivelse:
MOSFET N-CH 100V 180A H2PAK-2
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
12708 Pieces
Leveringstid:
1-2 days
Datablad:
STH315N10F7-2.pdf

Introduktion

We can supply STH315N10F7-2, use the request quote form to request STH315N10F7-2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STH315N10F7-2.The price and lead time for STH315N10F7-2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STH315N10F7-2.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:H2Pak-2
Serie:DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:2.3 mOhm @ 60A, 10V
Power Dissipation (Max):315W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andre navne:497-14718
497-14718-1
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:38 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:12800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):100V
Detaljeret beskrivelse:N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:180A (Tc)
Email:[email protected]

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