Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-263-7 |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 30A, 10V |
Power Dissipation (Max): | 375W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab) |
Andre navne: | SQM200N04-1M1L-GE3 SQM200N04-1M1L-GE3-ND |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 20655pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 413nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 40V |
Detaljeret beskrivelse: | N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 200A (Tc) |
Email: | [email protected] |