SQJ868EP-T1_GE3
SQJ868EP-T1_GE3
Varenummer:
SQJ868EP-T1_GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 40V 58A POWERPAKSOL
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
55561 Pieces
Leveringstid:
1-2 days
Datablad:
SQJ868EP-T1_GE3.pdf

Introduktion

We can supply SQJ868EP-T1_GE3, use the request quote form to request SQJ868EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ868EP-T1_GE3.The price and lead time for SQJ868EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ868EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® SO-8L
Serie:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:7.35 mOhm @ 14A, 10V
Power Dissipation (Max):48W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® SO-8
Andre navne:SQJ868EP-T1_GE3TR
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2450pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):40V
Detaljeret beskrivelse:N-Channel 40V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8L
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:58A (Tc)
Email:[email protected]

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