Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 3.9V @ 350µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO262-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Power Dissipation (Max): | 83W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andre navne: | SP000014632 SP000680982 SPI07N65C3 SPI07N65C3-ND SPI07N65C3IN SPI07N65C3IN-ND SPI07N65C3X SPI07N65C3XK |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 790pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Detaljeret beskrivelse: | N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO262-3-1 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.3A (Tc) |
Email: | [email protected] |