SIZ902DT-T1-GE3
SIZ902DT-T1-GE3
Varenummer:
SIZ902DT-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET 2N-CH 30V 16A POWERPAIR
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
29558 Pieces
Leveringstid:
1-2 days
Datablad:
SIZ902DT-T1-GE3.pdf

Introduktion

We can supply SIZ902DT-T1-GE3, use the request quote form to request SIZ902DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ902DT-T1-GE3.The price and lead time for SIZ902DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ902DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.2V @ 250µA
Leverandør Device Package:8-PowerPair® (6x5)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:12 mOhm @ 13.8A, 10V
Strøm - Max:29W, 66W
Emballage:Tape & Reel (TR)
Pakke / tilfælde:8-PowerWDFN
Andre navne:SIZ902DT-T1-GE3TR
SIZ902DTT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:27 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
FET Type:2 N-Channel (Half Bridge)
FET-funktion:Logic Level Gate
Afløb til Source Voltage (VDSS):30V
Detaljeret beskrivelse:Mosfet Array 2 N-Channel (Half Bridge) 30V 16A 29W, 66W Surface Mount 8-PowerPair® (6x5)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:16A
Basenummer:SIZ902
Email:[email protected]

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