SIHG47N65E-GE3
SIHG47N65E-GE3
Varenummer:
SIHG47N65E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 650V 47A TO-247AC
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
12082 Pieces
Leveringstid:
1-2 days
Datablad:
SIHG47N65E-GE3.pdf

Introduktion

We can supply SIHG47N65E-GE3, use the request quote form to request SIHG47N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG47N65E-GE3.The price and lead time for SIHG47N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG47N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-247AC
Serie:-
Rds On (Max) @ Id, Vgs:72 mOhm @ 24A, 10V
Power Dissipation (Max):417W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-247-3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:5682pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:273nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):650V
Detaljeret beskrivelse:N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AC
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:47A (Tc)
Email:[email protected]

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