SIHB15N50E-GE3
SIHB15N50E-GE3
Varenummer:
SIHB15N50E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 500V 14.5A TO-263
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
9123 Pieces
Leveringstid:
1-2 days
Datablad:
SIHB15N50E-GE3.pdf

Introduktion

We can supply SIHB15N50E-GE3, use the request quote form to request SIHB15N50E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB15N50E-GE3.The price and lead time for SIHB15N50E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB15N50E-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:D²PAK (TO-263)
Serie:-
Rds On (Max) @ Id, Vgs:280 mOhm @ 7.5A, 10V
Power Dissipation (Max):156W (Tc)
Emballage:Bulk
Pakke / tilfælde:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1162pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:66nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):500V
Detaljeret beskrivelse:N-Channel 500V 14.5A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:14.5A (Tc)
Email:[email protected]

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