SIA477EDJT-T1-GE3
SIA477EDJT-T1-GE3
Varenummer:
SIA477EDJT-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 12V 12A SC70-6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
30821 Pieces
Leveringstid:
1-2 days
Datablad:
SIA477EDJT-T1-GE3.pdf

Introduktion

We can supply SIA477EDJT-T1-GE3, use the request quote form to request SIA477EDJT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA477EDJT-T1-GE3.The price and lead time for SIA477EDJT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA477EDJT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® SC-70-6 Single
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:13 mOhm @ 5A, 4.5V
Power Dissipation (Max):19W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:PowerPAK® SC-70-6
Andre navne:SIA477EDJT-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:3050pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:50nC @ 4.5V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.8V, 4.5V
Afløb til Source Voltage (VDSS):12V
Detaljeret beskrivelse:P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer