SIA421DJ-T1-GE3
SIA421DJ-T1-GE3
Varenummer:
SIA421DJ-T1-GE3
Fabrikant:
Vishay / Siliconix
Beskrivelse:
MOSFET P-CH 30V 12A SC70-6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
50417 Pieces
Leveringstid:
1-2 days
Datablad:
SIA421DJ-T1-GE3.pdf

Introduktion

We can supply SIA421DJ-T1-GE3, use the request quote form to request SIA421DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA421DJ-T1-GE3.The price and lead time for SIA421DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA421DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Test:950pF @ 15V
Spænding - Opdeling:PowerPAK® SC-70-6 Single
Vgs (th) (Max) @ Id:35 mOhm @ 5.3A, 10V
Vgs (Max):4.5V, 10V
Teknologi:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:12A (Tc)
Polarisering:PowerPAK® SC-70-6
Andre navne:SIA421DJ-T1-GE3TR
SIA421DJT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:24 Weeks
Producentens varenummer:SIA421DJ-T1-GE3
Inputkapacitans (Ciss) (Max) @ Vds:29nC @ 10V
IGBT Type:±20V
Gate Charge (Qg) (Max) @ Vgs:3V @ 250µA
FET-funktion:P-Channel
Udvidet beskrivelse:P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Afløb til Source Voltage (VDSS):-
Beskrivelse:MOSFET P-CH 30V 12A SC70-6
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:30V
Kapacitansforhold:3.5W (Ta), 19W (Tc)
Email:[email protected]

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