SIA418DJ-T1-GE3
SIA418DJ-T1-GE3
Varenummer:
SIA418DJ-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 30V 12A SC70-6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
24522 Pieces
Leveringstid:
1-2 days
Datablad:
SIA418DJ-T1-GE3.pdf

Introduktion

We can supply SIA418DJ-T1-GE3, use the request quote form to request SIA418DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA418DJ-T1-GE3.The price and lead time for SIA418DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA418DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® SC-70-6 Single
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:18 mOhm @ 9A, 10V
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:PowerPAK® SC-70-6
Andre navne:SIA418DJ-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V, 10V
Afløb til Source Voltage (VDSS):30V
Detaljeret beskrivelse:N-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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