SI7888DP-T1-E3
SI7888DP-T1-E3
Varenummer:
SI7888DP-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 30V 9.4A PPAK SO-8
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
53010 Pieces
Leveringstid:
1-2 days
Datablad:
SI7888DP-T1-E3.pdf

Introduktion

We can supply SI7888DP-T1-E3, use the request quote form to request SI7888DP-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7888DP-T1-E3.The price and lead time for SI7888DP-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7888DP-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® SO-8
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:12 mOhm @ 12.4A, 10V
Power Dissipation (Max):1.8W (Ta)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® SO-8
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 5V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V, 10V
Afløb til Source Voltage (VDSS):30V
Detaljeret beskrivelse:N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:9.4A (Ta)
Email:[email protected]

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