SI7117DN-T1-E3
SI7117DN-T1-E3
Varenummer:
SI7117DN-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 150V 2.17A 1212-8
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
65867 Pieces
Leveringstid:
1-2 days
Datablad:
SI7117DN-T1-E3.pdf

Introduktion

We can supply SI7117DN-T1-E3, use the request quote form to request SI7117DN-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7117DN-T1-E3.The price and lead time for SI7117DN-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7117DN-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® 1212-8
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:1.2 Ohm @ 500mA, 10V
Power Dissipation (Max):3.2W (Ta), 12.5W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® 1212-8
Andre navne:SI7117DN-T1-E3TR
SI7117DNT1E3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:33 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):6V, 10V
Afløb til Source Voltage (VDSS):150V
Detaljeret beskrivelse:P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:2.17A (Tc)
Email:[email protected]

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