Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 3V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-TSSOP |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 2.7A, 10V |
Power Dissipation (Max): | 1W (Ta) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-TSSOP (0.173", 4.40mm Width) |
Andre navne: | SI6459BDQ-T1-GE3TR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Detaljeret beskrivelse: | P-Channel 60V 2.2A (Ta) 1W (Ta) Surface Mount 8-TSSOP |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.2A (Ta) |
Email: | [email protected] |