SI4486EY-T1-GE3
Varenummer:
SI4486EY-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 100V 5.4A 8-SOIC
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
5733 Pieces
Leveringstid:
1-2 days
Datablad:
SI4486EY-T1-GE3.pdf

Introduktion

We can supply SI4486EY-T1-GE3, use the request quote form to request SI4486EY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4486EY-T1-GE3.The price and lead time for SI4486EY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4486EY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2V @ 250µA (Min)
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:25 mOhm @ 7.9A, 10V
Power Dissipation (Max):1.8W (Ta)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:8-SOIC (0.154", 3.90mm Width)
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):6V, 10V
Afløb til Source Voltage (VDSS):100V
Detaljeret beskrivelse:N-Channel 100V 5.4A (Ta) 1.8W (Ta) Surface Mount 8-SO
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:5.4A (Ta)
Email:[email protected]

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