Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.4V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 15A, 10V |
Power Dissipation (Max): | 3W (Ta), 6W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 8-SOIC (0.154", 3.90mm Width) |
Andre navne: | SI4186DY-T1-GE3-ND SI4186DY-T1-GE3TR SI4186DYT1GE3 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 27 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 3630pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 20V |
Detaljeret beskrivelse: | N-Channel 20V 35.8A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35.8A (Tc) |
Email: | [email protected] |