SI2308DS-T1-E3
Varenummer:
SI2308DS-T1-E3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 60V 2A SOT23-3
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
10279 Pieces
Leveringstid:
1-2 days
Datablad:
SI2308DS-T1-E3.pdf

Introduktion

We can supply SI2308DS-T1-E3, use the request quote form to request SI2308DS-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI2308DS-T1-E3.The price and lead time for SI2308DS-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI2308DS-T1-E3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:SOT-23-3 (TO-236)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:160 mOhm @ 2A, 10V
Power Dissipation (Max):1.25W (Ta)
Emballage:Cut Tape (CT)
Pakke / tilfælde:TO-236-3, SC-59, SOT-23-3
Andre navne:SI2308DS-T1-E3CT
SI2308DST1E3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V, 10V
Afløb til Source Voltage (VDSS):60V
Detaljeret beskrivelse:N-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:-
Email:[email protected]

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