SI1499DH-T1-GE3
Varenummer:
SI1499DH-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 8V 1.6A SC-70-6
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
60355 Pieces
Leveringstid:
1-2 days
Datablad:
SI1499DH-T1-GE3.pdf

Introduktion

We can supply SI1499DH-T1-GE3, use the request quote form to request SI1499DH-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1499DH-T1-GE3.The price and lead time for SI1499DH-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1499DH-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:SC-70-6 (SOT-363)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:78 mOhm @ 2A, 4.5V
Power Dissipation (Max):2.5W (Ta), 2.78W (Tc)
Emballage:Original-Reel®
Pakke / tilfælde:6-TSSOP, SC-88, SOT-363
Andre navne:SI1499DH-T1-GE3DKR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:33 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:650pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.2V, 4.5V
Afløb til Source Voltage (VDSS):8V
Detaljeret beskrivelse:P-Channel 8V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:1.6A (Tc)
Email:[email protected]

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