RN2709JE(TE85L,F)
RN2709JE(TE85L,F)
Varenummer:
RN2709JE(TE85L,F)
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
TRANS 2PNP PREBIAS 0.1W ESV
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
54586 Pieces
Leveringstid:
1-2 days
Datablad:
RN2709JE(TE85L,F).pdf

Introduktion

We can supply RN2709JE(TE85L,F), use the request quote form to request RN2709JE(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2709JE(TE85L,F).The price and lead time for RN2709JE(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2709JE(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Spænding - Samler Emitter Opdeling (Max):50V
Vce Mætning (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Leverandør Device Package:ESV
Serie:-
Modstand - Emitterbase (R2):22 kOhms
Modstand - Base (R1):47 kOhms
Strøm - Max:100mW
Emballage:Tape & Reel (TR)
Pakke / tilfælde:SOT-553
Andre navne:RN2709JE(TE85LF)TR
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Frekvens - Overgang:200MHz
Detaljeret beskrivelse:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Nuværende - Collector Cutoff (Max):100nA (ICBO)
Nuværende - Samler (Ic) (Max):100mA
Email:[email protected]

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