NDD60N550U1-35G
NDD60N550U1-35G
Varenummer:
NDD60N550U1-35G
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 600V 8.2A IPAK-3
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
23529 Pieces
Leveringstid:
1-2 days
Datablad:
NDD60N550U1-35G.pdf

Introduktion

We can supply NDD60N550U1-35G, use the request quote form to request NDD60N550U1-35G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NDD60N550U1-35G.The price and lead time for NDD60N550U1-35G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NDD60N550U1-35G.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:IPAK (TO-251)
Serie:-
Rds On (Max) @ Id, Vgs:550 mOhm @ 4A, 10V
Power Dissipation (Max):94W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-251-3 Short Leads, IPak, TO-251AA
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):3 (168 Hours)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):600V
Detaljeret beskrivelse:N-Channel 600V 8.2A (Tc) 94W (Tc) Through Hole IPAK (TO-251)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:8.2A (Tc)
Email:[email protected]

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