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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Single > IXFH80N65X2-4
IXFH80N65X2-4
Varenummer:
IXFH80N65X2-4
Fabrikant:
IXYS Corporation
Beskrivelse:
MOSFET N-CH
Tilgængelig mængde:
16118 Pieces
Leveringstid:
1-2 days
Datablad:
IXFH80N65X2-4.pdf
Forespørgsel

Introduktion

We can supply IXFH80N65X2-4, use the request quote form to request IXFH80N65X2-4 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH80N65X2-4.The price and lead time for IXFH80N65X2-4 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH80N65X2-4.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-247-4L
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:38 mOhm @ 500mA, 10V
Power Dissipation (Max):890W (Tc)
Pakke / tilfælde:TO-247-4
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fabrikantens standard ledetid:24 Weeks
Inputkapacitans (Ciss) (Max) @ Vds:8300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):650V
Detaljeret beskrivelse:N-Channel 650V 80A (Tc) 890W (Tc) Through Hole TO-247-4L
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:80A (Tc)
Email:[email protected]

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