Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.35V @ 100µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ MX |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 32A, 10V |
Power Dissipation (Max): | 2.8W (Ta), 75W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | DirectFET™ Isometric MX |
Andre navne: | IRF6795MTR1PBFTR SP001524708 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 4280pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 25V |
Detaljeret beskrivelse: | N-Channel 25V 32A (Ta), 160A (Tc) 2.8W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 32A (Ta), 160A (Tc) |
Email: | [email protected] |