Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.55V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ SQ |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | DirectFET™ Isometric SQ |
Andre navne: | IRF6610 IRF6610-ND IRF6610TR1-ND IRF6610TR1TR SP001526776 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 1520pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 20V |
Detaljeret beskrivelse: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 15A (Ta), 66A (Tc) |
Email: | [email protected] |