Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | +20V, -12V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DIRECTFET™ MT |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 25A, 10V |
Power Dissipation (Max): | 3.6W (Ta), 42W (Tc) |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | DirectFET™ Isometric MT |
Andre navne: | *IRF6603 IRF6603CT |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) |
Blyfri Status / RoHS Status: | Contains lead / RoHS non-compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 6590pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 4.5V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 30V |
Detaljeret beskrivelse: | N-Channel 30V 27A (Ta), 92A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 27A (Ta), 92A (Tc) |
Email: | [email protected] |