Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 3.5V @ 40µA |
Vgs (Max): | ±16V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO251-3 |
Serie: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 900mA, 10V |
Power Dissipation (Max): | 25W (Tc) |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Andre navne: | IPSA70R1K2P7S SP001664784 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 174pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 400V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 700V |
Detaljeret beskrivelse: | N-Channel 700V 4.5A (Tc) 25W (Tc) Through Hole PG-TO251-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.5A (Tc) |
Email: | [email protected] |