FQU2N90TU-WS
FQU2N90TU-WS
Varenummer:
FQU2N90TU-WS
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 900V 1.7A IPAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
19263 Pieces
Leveringstid:
1-2 days
Datablad:
FQU2N90TU-WS.pdf

Introduktion

We can supply FQU2N90TU-WS, use the request quote form to request FQU2N90TU-WS pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQU2N90TU-WS.The price and lead time for FQU2N90TU-WS depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQU2N90TU-WS.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:I-PAK
Serie:QFET®
Rds On (Max) @ Id, Vgs:7.2 Ohm @ 850mA, 10V
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-251-3 Short Leads, IPak, TO-251AA
Andre navne:FQU2N90TU_WS
FQU2N90TU_WS-ND
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:27 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):900V
Detaljeret beskrivelse:N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:1.7A (Tc)
Email:[email protected]

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