FQI2N80TU
FQI2N80TU
Varenummer:
FQI2N80TU
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 800V 2.4A I2PAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
14548 Pieces
Leveringstid:
1-2 days
Datablad:
FQI2N80TU.pdf

Introduktion

We can supply FQI2N80TU, use the request quote form to request FQI2N80TU pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQI2N80TU.The price and lead time for FQI2N80TU depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQI2N80TU.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:I2PAK
Serie:QFET®
Rds On (Max) @ Id, Vgs:6.3 Ohm @ 900mA, 10V
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):800V
Detaljeret beskrivelse:N-Channel 800V 2.4A (Tc) 3.13W (Ta), 85W (Tc) Through Hole I2PAK
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:2.4A (Tc)
Email:[email protected]

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