FQB7N80TM_AM002
FQB7N80TM_AM002
Varenummer:
FQB7N80TM_AM002
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 800V 6.6A D2PAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
39538 Pieces
Leveringstid:
1-2 days
Datablad:
FQB7N80TM_AM002.pdf

Introduktion

We can supply FQB7N80TM_AM002, use the request quote form to request FQB7N80TM_AM002 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQB7N80TM_AM002.The price and lead time for FQB7N80TM_AM002 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQB7N80TM_AM002.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:D²PAK (TO-263AB)
Serie:QFET®
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 3.3A, 10V
Power Dissipation (Max):3.13W (Ta), 167W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:52nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):800V
Detaljeret beskrivelse:N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Surface Mount D²PAK (TO-263AB)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:6.6A (Tc)
Email:[email protected]

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