Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 5V @ 250µA |
Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-3PN |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
Power Dissipation (Max): | 280W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-3P-3, SC-65-3 |
Andre navne: | FQA9N90C_F109 FQA9N90C_F109-ND FQA9N90CF109 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 27 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 2730pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 900V |
Detaljeret beskrivelse: | N-Channel 900V 9A (Tc) 280W (Tc) Through Hole TO-3PN |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9A (Tc) |
Email: | [email protected] |