Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±25V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-3P |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 30.5A, 10V |
Power Dissipation (Max): | 190W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-3P-3, SC-65-3 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 2730pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 100V |
Detaljeret beskrivelse: | N-Channel 100V 61A (Tc) 190W (Tc) Through Hole TO-3P |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 61A (Tc) |
Email: | [email protected] |