Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Samler Emitter Opdeling (Max): | 50V |
Vce Mætning (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Transistor Type: | PNP - Pre-Biased |
Leverandør Device Package: | TO-92-3 |
Serie: | - |
Modstand - Emitterbase (R2): | 4.7 kOhms |
Modstand - Base (R1): | 4.7 kOhms |
Strøm - Max: | 300mW |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andre navne: | FJN4301RTACT |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 2 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Frekvens - Overgang: | 200MHz |
Detaljeret beskrivelse: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
Nuværende - Samler (Ic) (Max): | 100mA |
Basenummer: | FJN4301 |
Email: | [email protected] |