FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1
Varenummer:
FF11MR12W1M1B11BOMA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beskrivelse:
MOSFET 2 N-CH 1200V 100A MODULE
Blyfri Status / RoHS Status:
Indeholder lead / RoHS-kompatibel
Tilgængelig mængde:
23944 Pieces
Leveringstid:
1-2 days
Datablad:
1.FF11MR12W1M1B11BOMA1.pdf2.FF11MR12W1M1B11BOMA1.pdf

Introduktion

We can supply FF11MR12W1M1B11BOMA1, use the request quote form to request FF11MR12W1M1B11BOMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FF11MR12W1M1B11BOMA1.The price and lead time for FF11MR12W1M1B11BOMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FF11MR12W1M1B11BOMA1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5.55V @ 40mA
Leverandør Device Package:Module
Serie:CoolSiC™
Rds On (Max) @ Id, Vgs:11 mOhm @ 100A, 15V
Strøm - Max:20mW
Emballage:Tray
Pakke / tilfælde:Module
Andre navne:FF11MR12W1M1_B11
SP001602204
Driftstemperatur:-40°C ~ 150°C (TJ)
Monteringstype:Chassis Mount
Fugtfølsomhedsniveau (MSL):Not Applicable
Blyfri Status / RoHS Status:Contains lead / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:7950pF @ 800V
Gate Charge (Qg) (Max) @ Vgs:250nC @ 15V
FET Type:2 N-Channel (Dual)
FET-funktion:Silicon Carbide (SiC)
Afløb til Source Voltage (VDSS):1200V (1.2kV)
Detaljeret beskrivelse:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A 20mW Chassis Mount Module
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:100A
Email:[email protected]

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