Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Spænding - Test: | 100pF @ 100V |
Spænding - Opdeling: | Die Outline (4-Solder Bar) |
Vgs (th) (Max) @ Id: | 100 mOhm @ 3A, 5V |
Teknologi: | GaNFET (Gallium Nitride) |
Serie: | eGaN® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs: | 5A (Ta) |
Polarisering: | Die |
Andre navne: | 917-EPC2012CENGRTR |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | EPC2012CENGR |
Inputkapacitans (Ciss) (Max) @ Vds: | 1nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 1mA |
FET-funktion: | N-Channel |
Udvidet beskrivelse: | N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar) |
Afløb til Source Voltage (VDSS): | - |
Beskrivelse: | TRANS GAN 200V 5A BUMPED DIE |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 200V |
Kapacitansforhold: | - |
Email: | [email protected] |