Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±8V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | DFN2015H4-3 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 54 mOhm @ 2.5A, 4.5V |
Power Dissipation (Max): | 530mW (Ta) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 3-XFDFN |
Andre navne: | DMP2069UFY4-7DITR DMP2069UFY47 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 214pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 9.1nC @ 4.5V |
FET Type: | P-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4.5V |
Afløb til Source Voltage (VDSS): | 20V |
Detaljeret beskrivelse: | P-Channel 20V 2.5A (Ta) 530mW (Ta) Surface Mount DFN2015H4-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.5A (Ta) |
Email: | [email protected] |