Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±10V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | X2-DFN1006-3 |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 100mA, 4V |
Power Dissipation (Max): | 350mW (Ta) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | 3-XFDFN |
Andre navne: | DMN32D2LFB47 DMN32D2LFB4DITR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 14 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 39pF @ 3V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 1.8V, 4V |
Afløb til Source Voltage (VDSS): | 30V |
Detaljeret beskrivelse: | N-Channel 30V 300mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 300mA (Ta) |
Email: | [email protected] |