Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | +25V, -5V |
Teknologi: | SiCFET (Silicon Carbide) |
Leverandør Device Package: | Die |
Serie: | Z-FET™ |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 10A, 20V |
Power Dissipation (Max): | 202W (Tj) |
Emballage: | Bulk |
Pakke / tilfælde: | Die |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 928pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs: | 47.1nC @ 20V |
FET Type: | N-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 20V |
Afløb til Source Voltage (VDSS): | 1200V |
Detaljeret beskrivelse: | N-Channel 1200V 28A (Tj) 202W (Tj) Surface Mount Die |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 28A (Tj) |
Email: | [email protected] |