ZXMN2AM832TA
ZXMN2AM832TA
Artikelnummer:
ZXMN2AM832TA
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 20V 2.9A 8MLP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22342 Pieces
Lieferzeit:
1-2 days
Datenblatt:
ZXMN2AM832TA.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:700mV @ 250µA (Min)
Supplier Device-Gehäuse:8-MLP (3x2)
Serie:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 4A, 4.5V
Leistung - max:1.7W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-VDFN Exposed Pad
Andere Namen:ZXMN2AM832DKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:299pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:3.1nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 2.9A 1.7W Surface Mount 8-MLP (3x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.9A
Email:[email protected]

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